Gate-All-Around FET (GAAFET) Technology Market – Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2018-2025

Gate-All-Around FET (GAAFET) Technology Market – Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2018-2025

Gate-All-Around FET (GAAFET) is a multi-gate device that interpolates more than one gate devices into a single device. GAAFET is silicone nanowire with gate going around it. It is a device, where the gate is placed on all four sides of the channel. These multiple gates are controlled by a single gate electrode.

The major factor that drives the demand of GAAFET technology market is the enhancement of breakdown voltage. Minimized energy losses is also the key driver of the market.

In addition GAAFET also has high efficiency, improved durability, and it supports high input impudence, which in turn fuels the market growth. High fabrication cost majorly restricts the market growth.

However, performance issues such as current leakage and breakdown hamper the market.

The Gate-All-Around FET (GAAFET) Technology market was valued at xx Million US$ in 2017 and is projected to reach xx Million US$ by 2025, at a CAGR of xx% during the forecast period. In this study, 2017 has been considered as the base year and 2018 to 2025 as the forecast period to estimate the market size for Gate-All-Around FET (GAAFET) Technology.

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This report presents the worldwide Gate-All-Around FET (GAAFET) Technology market size (value, production and consumption), splits the breakdown (data status 2013-2018 and forecast to 2025), by manufacturers, region, type and application.

This study also analyzes the market status, market share, growth rate, future trends, market drivers, opportunities and challenges, risks and entry barriers, sales channels, distributors and Porter’s Five Forces Analysis.

The following manufacturers are covered in this report:

Infineon Technologies AG

Fairchild Semiconductor.

Renesas Electronics Corporation

Digi-Key Electronics

Toshiba Corporation

IXYS Corporation

Power Integration


NXP semiconductors

ABB Group

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Gate-All-Around FET (GAAFET) Technology Breakdown Data by Type

Type I

Type II

Gate-All-Around FET (GAAFET) Technology Breakdown Data by Application

Energy & Power

Consumer Electronics

Inverter & UPS

Industrial System

Others (Medical Devices & Traction)


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Some Points From Table of Content:

Chapter One: Study Coverage

Chapter Two: Executive Summary

Chapter Three: Market Size by Manufacturers

Chapter Four: Gate-All-Around FET (GAAFET) Technology Production by Regions

Chapter Five: Gate-All-Around FET (GAAFET) Technology Consumption by Regions

Chapter Six: Market Size by Type

Chapter Seven: Market Size by Application



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